skm150gb12t4 ? by semikron rev. 4 C 03.09.2013 1 semitrans ? 2 gb fast igbt4 modulesskm150gb12t4 features igbt4 = 4. generation fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 20khz ul recognized, file no. e63532 typical applications* ac inverter drives ups electronic welders at fsw up to 20 khz remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 175 c t c =25c 232 a t c =80c 179 a i cnom 150 a i crm i crm = 3xi cnom 450 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 189 a t c =80c 141 a i fnom 150 a i frm i frm = 3xi fnom 450 a i fsm t p = 10 ms, sin 180, t j =25c 900 a t j -40 ... 175 c module i t(rms) t terminal =80c 200 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.80 2.05 v t j =150c 2.20 2.40 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 6.67 7.67 m ? t j =150c 10.00 10.67 m ? v ge(th) v ge =v ce , i c =6ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 2.0 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 9.3 nf c oes f=1mhz 0.58 nf c res f=1mhz 0.51 nf q g v ge = - 8 v...+ 15 v 850 nc r gint t j =25c 5.0 ? t d(on) v cc = 600 v i c =150a v ge =15v r g on =1 ? r g off =1 ? di/dt on = 3400 a/s di/dt off =1750a/s t j =150c 180 ns t r t j =150c 42 ns e on t j =150c 19.2 mj t d(off) t j =150c 410 ns t f t j =150c 72 ns e off t j =150c 15.8 mj r th(j-c) per igbt 0.19 k/w
skm150gb12t4 2 rev. 4 C 03.09.2013 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 150 a v ge =0v chiplevel t j =25c 2.14 2.46 v t j =150c 2.07 2.38 v v f0 chiplevel t j =25c 1.3 1.5 v t j =150c 0.9 1.1 v r f chiplevel t j =25c 5.6 6.4 m ? t j =150c 7.8 8.5 m ? i rrm i f = 150 a di/dt off =3100a/s v ge =15v v cc = 600 v t j =150c 120 a q rr t j =150c 31.3 c e rr t j =150c 13 mj r th(j-c) per diode 0.31 k/w module l ce 30 nh r cc'+ee' terminal-chip t c =25c 0.65 m ? t c =125c 1m ? r th(c-s) per module 0.04 0.05 k/w m s to heat sink m6 3 5 nm m t to terminals m5 2.5 5 nm nm w 160 g semitrans ? 2 gb fast igbt4 modulesskm150gb12t4 features igbt4 = 4. generation fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for higher switching frequenzies up to 20khz ul recognized, file no. e63532 typical applications* ac inverter drives ups electronic welders at fsw up to 20 khz remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c
skm150gb12t4 ? by semikron rev. 4 C 03.09.2013 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm150gb12t4 4 rev. 4 C 03.09.2013 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm150gb12t4 ? by semikron rev. 4 C 03.09.2013 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 2 gb
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